| PART |
Description |
Maker |
| NPA1006 |
GaN Wideband Power Amplifier, 28 V, 12.5 W
|
M/A-COM Technology Solu...
|
| TDA8928J TDA8928ST |
Power stage 2 x 10 or 1 x 20 W class-D audio amplifie
|
NXP Semiconductors
|
| MAGX-011086-SMBPPR |
GaN Wideband Transistor 28 V, 4 W
|
M/A-COM Technology Solu...
|
| HMC478MP86 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 4.0 GHz
|
Hittite Microwave Corporation
|
| CGH40025F |
25 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| CGH40006P-AMP |
6 W, RF Power GaN HEMT
|
Cree, Inc
|
| G22001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| MW4IC001MR4 MW4IC001MR406 |
RF LDMOS Wideband Integrated Power Amplifier
800??170 MHz, 900 mW, 28 V W??DMA RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc
MOTOROLA
|
| CG2H40045 CG2H40045F CG2H40045P |
45 W, DC - 4 GHz RF Power GaN HEMT
|
Cree, Inc
|
| CG2H30070F |
70 W, 0.5?.0 GHz, 28 V, RF Power GaN HEMT
|
Cree, Inc
|
| CG2H40010 CG2H40010F CG2H40010P |
10 W, DC - 6 GHz, RF Power GaN HEMT
|
Cree, Inc
|
